FW507 no.8403-1/6 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8403 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 81205pa ms im tb-00001717 FW507 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications features ? composite type with a low on-resistance, ultrahigh-speed switching, low voltage drive, p-channel mosfet and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting. ? the FW507 incorporates two chips being equivalent to the mch3312 and the sb1003m in one package. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 3 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --12 a allowable power dissipation p d mounted on a ceramic board (3000mm 2 5 0.8mm) 10s 1unit 2w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 35 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 5 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : w507
FW507 no.8403-2/6 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--3a 1.9 3.3 s static drain-to-source on-state resistance r ds (on)1 i d =--3a, v gs =--10v 115 150 m w r ds (on)2 i d =--1.5a, v gs =--4v 210 295 m w input capacitance ciss v ds =--10v, f=1mhz 200 pf output capacitance coss v ds =--10v, f=1mhz 47 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 32 pf turn-on delay time t d (on) see specified test circuit. 7.2 ns rise time t r see specified test circuit. 6.8 ns turn-off delay time t d (off) see specified test circuit. 18 ns fall time t f see specified test circuit. 8.0 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--3a 5.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--3a 0.98 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--3a 0.82 nc diode forward voltage v sd i s =--3a, v gs =0v --0.91 --1.2 v [sbd] reverse voltage v r i r =200 m a30v forward voltage v f i f =1a 0.47 0.55 v reverse current i r v r =15v 15 m a interterminal capacitance c v r =10v, f=1mhz 27 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm 7005-012 8765 1234 1 : anode 2 : anode 3 : source 4 : gate 5 : drain 6 : drain 7 : cathode 8 : cathode top view 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : anode 2 : anode 3 : source 4 : gate 5 : drain 6 : drain 7 : cathode 8 : cathode sanyo : sop8
FW507 no.8403-3/6 switching time test circuit t rr test circuit [mosfet] [sbd] --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 --2 --4 --6 --8 --12 --14 --16 --10 --18 --20 r ds (on) -- v gs it03225 0 0 --0.4 --0.8 --1.6 --2.0 --0.2 --1.2 0 50 100 150 200 250 300 350 400 0 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 i d -- v ds v gs = --3.0v --3.5v --4.0v --6.0v --10.0v it03223 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 i d -- v gs v ds = --10v 25 c --25 c ta=75 c it03224 r ds (on) -- ta it03226 50 100 150 200 250 300 350 400 0 ta=25 c --1.0a i d = --0.5a i d = --1.0a, v gs = --10v i d = --0.5a, v gs = --4v static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- m w [mosfet] [mosfet] [mosfet] [mosfet] pw=10 m s d.c. 1% p. g 50 w g s d i d = --3a r l =5 w v dd = --15v v out FW507 v in 0v --10v v in duty 10% 50 w 100 w 10 w --5v t rr 10 m s 100ma 100ma 10ma
FW507 no.8403-4/6 01234 6 5 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --10 v gs -- qg v ds = --10v i d = --2a it03231 --0.1 --1.0 23 57 23 5 7 5 3 2 2 10 100 7 5 3 2 1.0 sw time -- i d v dd = -- 15v v gs = --10 v t d (on) t d (off) t r t f it03229 ciss, coss, crss -- v ds a s o it03227 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 10 1.0 7 5 3 2 0.1 7 5 3 2 ? y fs ? -- i d v ds = --10v 75 c 25 c ta= --25 c it03228 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --0.01 --0.1 --10 --1.0 7 5 3 2 7 5 3 2 7 5 3 2 i s -- v sd v gs =0v --25 c 25 c ta=75 c 0 --5 --10 --15 --20 --25 --30 10 100 3 2 7 5 3 2 f=1mhz ciss coss crss it03230 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] drain-to-source voltage, v ds -- v drain current, i d -- a [mosfet] ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w [mosfet] 0 0 20 40 0.2 0.4 0.6 0.8 2.2 1.0 1.2 1.4 1.6 1.8 2.0 60 80 100 120 140 160 it09729 2 3 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 --0.1 23 57 --1.0 --0.01 23 57 23 57 --10 23 5 it09728 i dp = --12a i d = --3a operation in this area is limited by r ds (on). 100 m s 100ms 10s ( ta=25 c) 1ms 10ms <10 m s ta=25 c single pulse mounted on a ceramic board (3000mm 2 5 0.8mm) 10s 1unit mounted on a ceramic board (3000mm 2 5 0.8mm) 10s 1unit
FW507 no.8403-5/6 0 0.1 it07934 i f -- v f forward current, i f -- a forward voltage, v f -- v 10 0 40 it07935 i r -- v r reverse current, i r -- m a reverse voltage, v r -- v 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.2 0.3 0.4 0.5 0.6 0.7 0.001 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 5 7 2 3 1000 100 10 1.0 0.1 0.01 20 30 ta=125 c 100 c 75 c 50 c 25 c --25 c ta=1 25 c 1 00 c 75 c 50 c 25 c --25 c average forward power dissipation, p f (av) -- w p f (av) -- i o average output current, i o -- a average output current, i o -- a tc -- i o case temperature, tc -- c 0.1 0 0.4 0.6 1.0 0 0.8 1.2 0.2 0.3 0.4 0.5 0.6 0.7 (3) (1) (4) (2) 0.2 it08184 (1)rectangular wave q =60 (2)rectangular wave q =120 (3)rectangular wave q =180 (4)sine wave q =180 rectangular wave 180 360 sine wave q 360 it08185 20 0 0.4 0.2 0.6 1.0 0 0.8 1.2 40 60 80 100 120 140 (1) (2) (4) (3) (1)rectangular wav e q =60 (2)rectangular wav e q =120 (3)rectangular wav e q =180 (4)sine wav e q =180 1.0 0.1 10 2 2 3 3 5 7 100 7 23 5 10 7 23 5 100 7 23 5 reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf it07938 f=1mhz [sbd] [sbd] [sbd] [sbd] [sbd]
FW507 no.8403-6/6 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2005. specifications and information herein are subject to change without notice. note on usage : since the FW507 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
|
